Infineon 公司的PTFA212401E和PTFA212401F是 240W LDMOS FET,设计用于单/双载波WCDMA功率放大器.典型工作电压30V,工作频率为2140MHz,双载波WCDMA的平均输出功率为47.0dBm,线性增益可达15.8dB,效率为28%.互扰失真为-35dBc,相邻通道功率为-40dBc,而单载波WCDMA的工作频率为2140 MHz, 平均输出功率为49.0dBm,线性增益可达15.8dB,效率为34%,相邻通道功率为-33dBc.在2140MHz的连续波在P–1dB的输出功率为240 W,效率为54%.器件内部还集成了ESD保护.本文介绍了PTFA212401E和PTFA212401F的主要特性,2140MHz时的参考电路以及参考电路中所用的微带线尺寸和材料清单(BOM).

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineons advanced LDMOS process, these devices provide excellent thermal performance andsuperior reliability.
PTFA212401E/F主要特性:
Thermally-enhanced packages, Pb-free and RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 2140 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power



图1. PTFA212401参考电路(ƒ = 2140 MHz)
图1参考电路的微带线尺寸和所用材料清单(BOM):





详情请见:
http://www.infineon.com/dgdl/ptfa212401ef_v4_ds_r01.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30431d8a6b3c011dbea6e1ff27c7