无片外电容LDO的研究进展
电子技术应用 11期
李天硕,李严,刘莹
(北京信息科技大学,北京 100192)
摘要:低压差线性稳压器(LDO)在电路系统中负责提供稳定的电源电压,它是一种应用广泛的电源管理芯片。随着集成度和工艺的不断提高,无片外电容LDO逐渐替代含片外电容LDO成为研究重点,但无片外电容LDO需要额外的补偿电路以解决稳定性和瞬态响应特性较差的问题。为了解当前行业内的主流设计思路,调研了大量文献,分析了无片外电容LDO的研究进展,并分别总结了提高稳定性和瞬态响应特性的方案,提炼了其中的技术要点,评价了优缺点,最后提出了可以改进的空间并对今后的研究方向做了展望。
中图分类号:TN432
文献标志码:A
DOI: 10.16157/j.issn.0258-7998.233747
引用格式: 李天硕,李严,刘莹. 无片外电容LDO的研究进展[J]. 电子技术应用,2023,49(11):35-41.
文献标志码:A
DOI: 10.16157/j.issn.0258-7998.233747
引用格式: 李天硕,李严,刘莹. 无片外电容LDO的研究进展[J]. 电子技术应用,2023,49(11):35-41.
Progress research on LDO without off chip capacitor
Li Tianshuo,Li Yan,Liu Ying
(Beijing Information Science and Technology University , Beijing 100192, China)
Abstract:Low dropout linear regulator (LDO) is responsible for providing stable power supply voltage in the circuit system. It is a widely used power management chip. With the continuous improvement of integration and technology, the capacitor-free LDO gradually replaces the LDO with off chip and becomes the focus of research. However, the capacitor-free LDO needs additional compensation circuit to solve the problem of poor stability and transient response characteristics. In order to know the mainstream design ideas in the current industry, a large number of literatures were investigated, the research status of the capacitor-free LDO was analyzed, and the schemes to improve the stability and transient response characteristics were summarized, the technical points were refined, the advantages and disadvantages were evaluated, at last the room for improvement was proposed and the future research direction was prospected.
Key words :low dropout linear regulator;capacitor-free LDO;compensation circuit;stability;transient response characteristics
【引言】
电源管理芯片是集成电路系统中的重要模块,它的性能直接影响整个系统的性能[1]。低压差线性稳压器(LDO)是电源管理芯片的一种,它是输入输出电压具有较低电压差的线性稳压电源,因其具有功耗低、结构简单、面积小、电源电压抑制比高、噪声低等优点[2],被广泛应用于集成电路系统中[3]。至今,有越来越多的电路研究者投身于LDO的研究中,并且已经取得较好的成果,未来还将不断推出新的电路结构和优化方法。
通常称有片外电容的LDO为传统LDO,而没有片外电容的LDO为新型LDO。本文将首先分析传统LDO的局限,再介绍新型LDO在改善稳定性和速度方面的研究进展,最后将介绍其他性能指标的优化方法。
文章详细内容下载请点击:无片外电容LDO的研究进展AET-电子技术应用-最丰富的电子设计资源平台 (chinaaet.com)
【作者信息】
李天硕,李严,刘莹
(北京信息科技大学,北京 100192)
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