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基于GaN的输入谐波控制射频功率放大器设计
2021年电子技术应用第4期
邵煜伟,陶洪琪
南京电子器件研究所 微波毫米波单片集成和模块电路重点实验室,江苏 南京210016
摘要:定量地分析了输入谐波控制理论对功放效率的影响。同时,选用了南京电子器件研究所的0.25 ?滋m GaN HEMT器件,并对该GaN HEMT器件进行了负载牵引仿真和大信号仿真。根据仿真结果发现,通过输入谐波控制可以提升射频功率放大器的效率,在频带内能获得3~10%的效率提升。以此设计了一款X波段单级MMIC功放。经测试,该功放芯片在9.2~11.3 GHz范围内功率附加效率最大可以达到 52.88%。
中图分类号:TN722
文献标识码:A
DOI:10.16157/j.issn.0258-7998.201247
中文引用格式:邵煜伟,陶洪琪. 基于GaN的输入谐波控制射频功率放大器设计[J].电子技术应用,2021,47(4):67-70,76.
英文引用格式:Shao Yuwei,Tao Hongqi. Design of GaN-based input harmonic control RF power amplifier[J]. Application of Electronic Technique,2021,47(4):67-70,76.
Design of GaN-based input harmonic control RF power amplifier
Shao Yuwei,Tao Hongqi
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016,China
Abstract:The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT device were carried out. According to the test results, it is found that the efficiency of the RF power amplifier can be effectively improved through the input harmonic control, and an efficiency improvement at 3~10%can be obtained in band. Based on this, an X-band single-stage monolithic microwave integrated circuit(MMIC) power amplifier was designed. After testing, the power amplifier chip has a maximum PAE at 52.88% in the range of 9.2 to 11.3 GHz.
Key words :power amplifier;input harmonic control;high efficiency;monolithic microwave integrated circuit

0 引言

随着电子通信技术的不断发展,谐波控制射频功率放大器由于其高效率的特性广泛应用于航天雷达等领域中。谐波控制是目前提高功放效率的重要技术之一。




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作者信息:

邵煜伟,陶洪琪

(南京电子器件研究所 微波毫米波单片集成和模块电路重点实验室,江苏 南京210016)

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