NXP 无线模块BUF725 简介：

NXP的BUF725的可应用在GPS 的外置电线中。

其特点表现为：1）截止频率可以做到一百GHz以上， 可以很好的工作在10GHz频率以下。

2）与硅工艺兼容，易与CMOS 集成

3）相对GaAs，有成本优势

4）从性能来说，SiGe射频器件噪声低，开关速度快，温度特性好，输出功率大，效率高。

特征描述：

The BFU725F/N1 is a wideband silicon germanium amplifier transistor for high speed,

low-noise applications. The transistor is designed to be used for LNA applications up to

15 GHz such as GPS, satellite radio, cordless phone, wireless LAN and satellite LNB. The

BFU725F/N1 is packaged in a SOT343F that has 2 emitter pins to reduce emitter

inductance (for maximum gain).

The BFU725F/N1 is ideal for applications where cost is a concern. It also gives thedesigner flexibility in his design work, for bias current, frequency of operation,noise-figure, gain and P1dB.

方案介绍：

The demonstration boardenables testing of the device performance and requires no additional support circuitry.

The board is fully assembled with the BFU725F/N1, including input- and output-matching,to optimize the performance. For input matching, a compromise must be made betweenoptimum noise/maximum gain/RL/usable bandwidth of the application and customerrequirements. The board is mounted with signal input and output SMA connectors forconnection to RF test equipment.

基本参数
Frequency (GHz) Noise figure (dB) Associated gain (dB)
1.5 0.42 24
2.4 0.47 20
5.8 0.7 13.5
12 1.1 10

参考原理图：





参考PCB图：



详情请参见：
http://www.cn.nxp.com/documents/user_manual/UM10483.pdf